LGE 2sa1179 sot-23 free download

File name 2sa1179_sot-23.pdf

2SA1179 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10u A,IE=0 -55 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 uA DC current gain hFE VCE=-6V,IC=-1mA 200 400 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V Base -emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1.0 V Transition frequency fT VCE=-6V,IC=-10mA 180 MHz Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF 2SA1179 SOT-23 Transistor(PNP) Typical Characteristics